| PART |
Description |
Maker |
| 2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JAN |
NPN HIGH POWER SILICON TRANSISTOR 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA
NPN HIGH POWER SILICON TRANSISTOR 2 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3
From old datasheet system
(JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR
NPN Transistor
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 50N06-TA3-T 50N06-TF3-T 2SA102005 2SA1797-X-AA3-R |
SILICON PNP EPITAXIAL TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
SILICON PNP EPITAXIAL TRANSISTOR 进步党硅外延晶体
REVERSIBLE MOTOR DRIVER
NPN EPITAXIAL PLANAR TRANSISTOR
HIGH CURRENT SWITCHIG APPLICATIONS
HIGH CURRENT SWITCHING APPLICATIONS
HIGH VOLTAGE NPN TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR
NPN SILICON TRANSISTOR
HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA)
HIGH-FREQUENCY AMPLIFIER TRANSISTOR
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
SILICON PNP TRANSISTOR
LOW FREQUENCY PNP TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR
MEDIUM POWER TRANSISTOR
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL PLANAR TRANSISTOR
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES CO LTD
??『绉???′唤??????
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
| BU2520DW |
Silicon Diffused Power Transistor(纭???ｅ?????朵?绠?
Silicon Diffused Power Transistor(硅扩散功率型晶体 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2SD2163 |
Silicon power transistor
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING
|
NEC
|
| 2SB1430 |
Silicon power transistor
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC[NEC]
|
| STD13003 |
Switching Bipolar Power Transistor |Power Transistor |400V 1.5A 1.2W HFE8~40 开关功率晶体管|功率晶体管| 400V 1.5A的功率为1.2W HFE840
NPN Silicon Power Transistor
|
AUK, Corp.
AUK[AUK corp]
|
| MJE1300906 MJE13009G MJE13009 |
SWITCHMODE Series NPN Silicon Power Transistors(开关模式系列NPN硅功率晶体管) 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
|
ONSEMI[ON Semiconductor]
|
| 2SD1000 2SD1000-T1 2SD1000-T2 2SD1000-AZ |
700 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Silicon transistor
|
NEC[NEC]
|
| 2SC3734 2SC3734-L 2SC3734-T1B 2SC3734-T2B |
Silicon transistor
HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC[NEC]
|
| CEN-U10 |
NPN SILICON POWER TRANSISTOR 0.5 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-202
Leaded Power Transistor General Purpose
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
